报告题目：Silicon carbide, an emerging material platform for photonic integrated circuits (PIC) and quantum photonic integrated circuits (QPIC)

时间：2023.08.04 周五 10:00-12:00

地点：交叉二号楼B2005会议室

报告人：欧海燕教授

欧海燕于2000年从中科院半导体所半导体器件及微电子专业获得博士学位。同年加盟丹麦技术大学，并于2005年开始任副教授。她在2011年受日本科学促进会的资助在名城大学访问3个月，并在中科院半导体所访问1个月。她是2013欧洲材料研究学会（E-MRS）的研讨会G，2017年的研讨会O 和PIERS2014的LED研讨会的组织者之一。她的研究背景是用于光通信，光伏和发光的新材料和器件。她负责和参与了多项欧洲，北欧及丹麦的研究项目。她在国际杂志和国际会议上发表了212篇论文，包括一篇在顶尖杂志自然（Nature）上，并在国际会议上作特邀报告13次。她是Light Extraction公司的创始人， 2013年获得丹麦最有创新性研究的战略研究奖。她是自然出版社旗下的科学报告的编辑之一。

摘要：Silicon carbide (SiC), as wide bandgap semiconductor, possesses unique physical properties. These unique properties are being explored to provide radical solutions comparing to its counterparts such as silicon and gallium arsenide, representatives for the first- and second-generation semiconductors respectively. For example, SiC is playing a very important role in power electronics due to its high electron breakdown field, high electron saturation velocity, wide bandgap, high melting point and high thermal conductivity. SiC based power electronic devices consume less energy and have better performances.

As pioneer of applying silicon carbide in photonics, in this talk, I’ll present the state of the art of the SiC nanophotonics and color centers in bulk SiC. Prospectives of SiC PIC and QPIC will be foreseen and the challenges will be identified.